Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark

Yuyi Liu,Meiran Zhao,Bin Gao,Ruofei Hu,Wenqiang Zhang,Siyao Yang,Peng Yao,Feng Xu,Yue Xi,Qingtian Zhang,Jianshi Tang,He Qian,Huaqiang Wu

IEEE Transactions on Electron Devices（2021）

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摘要

A physics-based compact model of reliability degradation in analog resistive random access memory (RRAM) is developed. The model captures the stochastic degradation behaviors of retention, bit yield, and endurance during analog resistive switching. The model is verified with statistical data measured from analog RRAM arrays. Based on this compact model, a device-to-system simulation framework for ...

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关键词

Degradation,Reliability,Computational modeling,Switches,Training,Temperature measurement,Mathematical model

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