A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

IEEE Transactions on Electron Devices(2021)

引用 6|浏览3
暂无评分
摘要
We report a charge-based analytic and explicit compact model for field-effect transistors (FETs) based on 2-D materials (2DMs), for the simulation of 2DM-based analog and digital circuits. The device electrostatics is handled by invoking 2-D density of states and Fermi–Dirac statistics that are later combined with the Lambert-W function and Halley’s correction to eventually obtain explicit express...
更多
查看译文
关键词
Integrated circuit modeling,Field effect transistors,Charge carrier processes,SPICE,Logic gates,Electrostatics,Electric potential
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要