First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka,S. Miura,H. Honjo, H. Inoue, T. Watanabe,T. Nasuno,H. Naganuma,T. V. A. Nguyen,Y. Noguchi, M. Yasuhira,S. Ikeda,T. Endoh

IEEE Transactions on Electron Devices（2021）

引用 8|浏览7

暂无评分

摘要

We successfully developed 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability. To fabricate the quad-MTJ, a physical vapor deposition (PVD) process for depositing novel free layer and low resistance-area (RA) product MgO layer and low-damage fabrication processes were developed. The developed quad-MTJ technology and advanced process bring...

查看译文

关键词

Magnetic tunneling,Thermal stability,Temperature dependence,Spintronics,Magnetic anisotropy,Technological innovation,Perpendicular magnetic anisotropy

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要