A Multiscale Statistical Evaluation of DRAM Variable Retention Time

Plamen Asenov,Salvatore M. Amoroso,Jaehyun Lee,Fabiano Corsetti,Pieter Vancraeyveld,SØren Smidstrup,Xi-Wei Lin,Victor Moroz

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2021）

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摘要

This paper presents a multiscale physics-based approach for evaluating DRAM cell retention time including variable retention time effects. The flow goes from ab-initio DFT simulation to high-sigma SPICE analysis, allowing for the evaluation of the causes and retention time related failure states for DRAM technologies.

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关键词

Analytical models,Discrete Fourier transforms,Random access memory,SPICE,Manufacturing,Optimization

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