Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET

Weizhuo Gan,Raphaël Prentki,Kun Luo,Jiali Huo,Weixing Huang,Qiang Huo,Jianhui Bu,Ronggen Cao,Ye Lu,Huaxiang Yin,Hong Guo,Zhenhua Wu

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2021）

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摘要

With novel energy-filtering switching mechanism enabled by broken-gap-like source engineering, steep slope and high on-state current can be obtained in cold source FET (CSFET). In order to account for the energy-filtering mechanism, effective cold carrier distribution model is developed for drift-diffusion (DD) method and equivalent charge correction term is incorporated into industry standard BSI...

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关键词

steep-slope,nanowire FET,energy-filtering source

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