Achieving A Low Contact Resistivity of 0.11 .mm for Ti₅Al₁/TiN S/D Contact on Al_0.2Ga_0.8N/AlN/GaN Structure without Barrier Recess

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2021）

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S/D contact,AlGaN/AlN/GaN,gold-free,HEMTs

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Achieving A Low Contact Resistivity of 0.11 .mm for Ti5Al1/TiN S/D Contact on Al0.2Ga0.8N/AlN/GaN Structure without Barrier Recess