MOSFET C-V Characteristics Extraction Based on Ring Oscillator with Addressable DUTs

Zhen Zhou, Junxu Wu,ChangFeng Wang,Ganbing Shang,Xiaojin Li,Yabin Sun,Yanling Shi

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2021）

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摘要

In this paper, a test structure of ring oscillator (RO) with addressable devices under test (DUTs) is described for the extracting of MOSFET capacitance-voltage (C-V) curves. With a high oscillation frequency, the influence of the gate-leakage current will be reduced to negligible. The addressable array and its calibration method in this work mitigate the impact from the layout, spatial and proces...

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关键词

Ring oscillators,MOSFET,Voltage measurement,Capacitance-voltage characteristics,Layout,Logic gates,Length measurement

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