A Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2021)

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摘要
A new compact charge core model is proposed for accumulation-mode CAAC-IGZO FETs controlled with a FinFET-like common gate and a SOI-like independent bottom gate. The new core model accounts for all regions of device operation using only a fin cross-section area and gate perimeters as geometric parameters. The resulting compact model is verified in extractions from CAAC-IGZO FETs measured characte...
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关键词
Temperature measurement,Temperature,Field effect transistors,Logic gates,Size measurement,Manufacturing,Integrated circuit modeling
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