Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

N.A. Franchina Vergel, C. Post, F. Vaurette, Y. Lambert, D. Yarekha, C. Coinon,G. Fleury,T.S. Kulmala, T. Xu,L. Desplanque,X. Wallart,D. Vanmaekelbergh,C. Delerue,B. Grandidier

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2021）

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摘要

Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. W...

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关键词

Limiting,Lithography,Buildings,Lattices,Scattering,Quantum wells,Proximity effects

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