ADAPT: A Write Disturbance-Aware Programming Technique for Scaled Phase Change Memory

Muhammad Imran,Taehyun Kwon,Joon-Sung Yang

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems（2022）

引用 5|浏览9

暂无评分

摘要

Phase change memory (PCM) is an emerging, resistance-based, nonvolatile memory. With a promising scaling potential, PCM can replace the existing charge-based memory technologies. A highly scaled PCM is prone to write disturbance (WD) because of a high-current RESET programming pulse. Exploiting the data-dependent nature of WD, encoding techniques have been proposed to reduce the frequency of WD-vu...

查看译文

关键词

Phase change materials,Programming,Encoding,Resistance,Reliability,Random access memory,Phase change memory

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要