Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing
IEEE Transactions on Electron Devices(2021)
摘要
Junctionless transistors (JLTs) have promising advantages such as structural simplicity without p-n-junctions and bulk conduction-based operation for the realization of advanced complementary metal oxide semiconductor (CMOS) technologies. Here the channel-length dependence on the operation of JLTs with substrate biasing ( ${V}_{\text {gb}}$ ) was investigated in detail. Parasitic series resistance...
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关键词
Transistors,Substrates,Resistance,Silicon,Logic gates,Transconductance,Charge carriers
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