Resistive Random Access Memory Filament Visualization and Characterization using Photon Emission Microscopy

IEEE Electron Device Letters(2021)

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摘要
Near InfraRed (NIR) photon emission is observed from filaments in HfO2 Resistive Random Access Memories (ReRAMs). This technique is non-destructive and offers rapid localization of filaments, enabling statistical analysis of their spatial distribution. We show that the emission is electric-field driven. We also report direct experimental evidence of ${i}$ ) completely random spatial distribution ...
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关键词
Photonics,Cameras,Graphical models,Distribution functions,Random access memory,Electron microscopy,Voltage measurement
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