Resistive Random Access Memory Filament Visualization and Characterization using Photon Emission Microscopy
IEEE Electron Device Letters(2021)
摘要
Near InfraRed (NIR) photon emission is observed from filaments in HfO2 Resistive Random Access Memories (ReRAMs). This technique is non-destructive and offers rapid localization of filaments, enabling statistical analysis of their spatial distribution. We show that the emission is electric-field driven. We also report direct experimental evidence of ${i}$ ) completely random spatial distribution ...
更多查看译文
关键词
Photonics,Cameras,Graphical models,Distribution functions,Random access memory,Electron microscopy,Voltage measurement
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要