Analysis of interface properties and associated void of nanoscale Al precipitates in Al-Si alloys: First-principles calculations and experiment

Journal of Alloys and Compounds(2021)

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摘要
•The properties of the Al/Si interface were studied systematically.•Nanoscale Al precipitates will improve the toughness of eutectic Si particles.•The formation mechanism of the void associated with every Al precipitate is revealed.•The interface structure with a small number of vacancies may be closer to truth.
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关键词
First-principles,High-resolution transmission electron microscopy,Al/Si interface,Solute-vacancy pair,Void,Formation mechanism
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