PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

P. Chevalier, F. Gianesello, A. Pallotta, J. Azevedo Goncalves,G. Bertrand,J. Borrel, L. Boissonnet, E. Brezza, M. Buczko, E. Canderle,D. Celi,S. Cremer, N. Derrier,C. Diouf,C. Durand, F. Foussadier,P. Garcia, N. Guitard, A. Fleury,A. Gauthier,O. Kermarrec, J. Lajoinie, C.A. Legrand, V. Milon,F. Monsieur, Y. Mourier, D. Muller,D. Ney,R. Paulin,N. Pelloux, C. Renard, M.L. Rellier,P. Scheer, I. Sicard,N. Vulliet, A. Juge,E. Granger,D. Gloria, J. Uginet, L. Garchery, F. Paillardet

international electron devices meeting（2020）

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摘要

While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard. Although it is envisioned that 6G may bring an unprecedent transformation of the wireless networks in comparison with previous generations, the necessity to develop analog and RF specialized technologies to address new frequency spectra will remain. In this paper, we review the development of PD-SOI CMOS and SiGe BiCMOS technologies addressing 5G RF Integrated Circuits (RFICs) and their evolutions for 6G.

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关键词

RF,mmW,THz,FEM,SiGe,BiCMOS,RF-SOI

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