Magnetic-Field Enhancement Of Thz Surface Emission In Highly Resistive Gaas

2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)(2020)

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摘要
Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free- space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers.
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关键词
in-plane magnetic field,resistive samples,optically excited carriers,terahertz surface emission,semiconductor surface irradiation,femtosecond optical laser pulses,free-space terahetz transient generation,surface-emitted terahetz pulses,GaAs
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