Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process

Arslane Hatem Kacha,Macho Anani,Boudali Akkal,Zineb Benamara,Guillaume Monier,Hussein Mehdi,Christelle Varenne,Amadou Ndiaye,Christine Robert-Goumet

Journal of Alloys and Compounds（2021）

引用 5|浏览10

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摘要

Au/GaN/n-GaAs Schottky Barrier Diodes (SBDs) were fabricated by N2 plasma Nitridation of n-GaAs (100) surface yielding to the formation of GaN ultra thin film interfacial layer between AuSchottky contact and n-GaAs substrate.

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关键词

GaAs,Nitride materials,Thin films,Diffusion,Schottky barrier height (SBH),XPS,Electrical characterization

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