mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process
2020 IEEE International Electron Devices Meeting (IEDM)（2020）
关键词
RF HP,process improvements,varactors,FEOL improvements,Intel FinFET process,RF design-technology co-optimization efforts,front-end-of-line improvements,high frequency applications,direct transistor connection,design flexibility,high performance RF transistor,BEOL,size 22.0 nm
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