Photomixing Thz Generation From Nitrogen-Ion-Implanted Gaas Metal-Semiconductor-Metal Diodes Enhanced By A Bragg Mirror

Genyu Chen,Martin Mikulics,Roman Adam,Anthony Pericolo,John Serafini,Stefan Preble,J. Cheng, C. Chimera,I. Komissarov,Hilde H. Hardtdegen,Roman Sobolewski

2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2020）

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摘要

We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.

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关键词

nitrogen-ion-implanted GaAs metal-semiconductor-metal diodes,frequency range photomixer,metal-semiconductor-metal diode,THz radiation emission,photomixing,Bragg mirror structure,optical excitation,size 760.0 nm to 800.0 nm,GaAs:N

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