High Sensitivity X-Ray Detectors Based On 4h-Sic P-I-N Structure With 80 Mu M Thick Intrinsic Layer

In this work, a large size x-ray detector with a 25 mm(2) active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4x10(4)mu CGy(-1)cm(-2), good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray photons is further realized with energy resolutions of 1.1 and 4.9 keV at 5.9 and 59.5 keV, respectively. This work thus suggests the significant potentials of wide-bandgap SiC semiconductor for photon-resolved x-ray detection in a harsh environment.