Edge-state transport in circular quantum point contact quantum piezotronic transistors

Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating the conductance and electronic density distribution under different Fermi energies and strains. Transport property of edge states is studied by machine learning method and the transport conductance can be effectively predicted. These results show that the neural network can be used for obtaining electronic transport properties, and it has great potential for optimizing and designing high-performance quantum piezotronic devices.