A High-performance and Calibration-free True Random Number Generator Based on the Resistance Perturbation in RRAM Array

international electron devices meeting(2020)

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摘要
A calibration-free and parallel-friendly RRAM TRNG utilizing the resistance perturbation is demonstrated and modeled for the first time. 128-parallel-output is experimentally demonstrated on a RRAM array, achieving the highest throughput of 230 Mbps. The switching asymmetry and nonlinearity of RRAM is fully utilized to enable the resistance to fluctuate in a stable range spontaneously. This unique calibration-free feature contributes to high entropy and excellent statistical randomness, which are verified by the NIST SP800-90B and NIST SP800-22 tests, respectively. Excellent reliability is also demonstrated under extreme temperatures ranging from -40°C to 125°C, 10% variation in the operating voltage, and continuous working. Finally, this high-performance TRNG is used to successfully implement a stochastic computing system for handwritten digits recognition, demonstrating the feasibility for edge computing application as well as low-weight and low-cost IoT applications.
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关键词
128-parallel-output,RRAM array,highest throughput,switching asymmetry,stable range,unique calibration-free feature,high entropy,excellent statistical randomness,NIST SP800-90B,NIST SP800-22 tests,excellent reliability,high-performance TRNG,random number generator,resistance perturbation,parallel-friendly RRAM TRNG
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