High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications

F. Arnaud,P. Ferreira,F. Piazza, A. Gandolfo, P. Zuliani,P. Mattavelli, E. Gomiero, G. Samanni, J. Jasse,C. Jahan, J. P. Reynard,R. Berthelon,O. Weber,A. Villaret, B. Dumont, J. C. Grenier,R. Ranica, C. Gallon,C. Boccaccio, A. Souhaite, L. Desvoivres,D. Ristoiu,L. Favennec, V. Caubet,S. Delmedico,N. Cherault, R. Beneyton, S. Chouteau, P. O. Sassoulas,L. Clement, P. Boivin, D. Turgis, F. Disegni, J. L. Ogier,X. Federspiel, O. Kermarrec, M. Molgg, A. Viscuso, R. Annunziata,A. Maurelli,P. Cappelletti, E. Ciantar

international electron devices meeting(2020)

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摘要
in this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FDSOI substrate, innovative Super-STI (SSTI) scheme has been developed enabling 0,019um2 PCM cell. It is the densest eNVM cell reported so far, based on our knowledge. Ultimate analog performance targets for automotive have been successfully demonstrated without compromising reliability for 5V transistor thanks to a novel gate stack \u0026 spacers architecture. Automotive grade-0 reliability criteria have been achieved on 16MB PCM array, including 3x aggressive runs of soldering reflow thermal stress (265°C/210s). Finally, wide reading window has been shown even after 250K writing operation at 165°C.
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关键词
high density embedded PCM cell,FDSOI technology,automotive microcontroller applications,triple gate oxide devices scheme,automotive microcontroller,FDSOI substrate,densest eNVM cell,gate stack,PCM array,automotive grade-0 reliability,ultimate analog performance,innovative super-STI scheme,bipolar junction transistor selector,FDSOI-PCM solution,soldering reflow,thermal stress,temperature 165.0 degC,size 28.0 nm,voltage 5.0 V,memory size 16.0 MByte,voltage 1 V,voltage 8 V,Si
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