A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics

S. King, J. Plombon, J. Bielefeld, J. Blackwell, S. Vyas, R. Chebiam,C. Naylor,D. Michalak, M. Kobrinsky,F. Gstrein,M. Metz,J. Clarke, R. Thapa,M. Paquette,V. Vemuri,N. Strandwitz, Y. Fan,M. Orlowski

international electron devices meeting(2020)

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摘要
The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore’s law for another decade and usher in an array of new devices and computational paradigms.
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关键词
dielectric scaling,permittivity spectrum,dielectric innovations,permittivity scaling,dielectric materials,CMOS nanoelectronics,Moore's law
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