Low Density Carrier Mobility In Silicon And Gallium Arsenide By Two-Photon Time-Resolved Terahertz Spectroscopy
2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2020）
摘要
Below bandgap two-photon excitation of bulk silicon and gallium arsenide samples is used to evenly generate low density carriers (<10(13) cm(-3)) throughout the entire sample thickness. Analysis of the frequency-dependent THz conductivity as a function of density allows determination of mobility at lower densities than previously examined using Hall contact measurements.
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关键词
gallium arsenide samples,bulk silicon,bandgap two-photon excitation,two-photon time-resolved terahertz spectroscopy,low density carrier mobility,lower densities,frequency-dependent,entire sample thickness,low density carriers
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