Energy Storage And Dielectric Properties Of Plzst-Based Antiferroelectric Ceramics Doped With Binbo4

In this work, (1-x)(Pb0.97La0.02)(Zr0.5Sn0.44Ti0.06)O-3-x BiNbO4 (x = 0-0.15) ceramics ((1-x)PLZST-xBiNbO(4)) were prepared by solid state reaction method. By changing the content of BiNbO4, the phase evolution, dielectric properties and energy storage properties were studied comprehensively. It is found that with the increase of BiNbO4 content, there are two peaks of dielectric constant. The mild BiNbO4 doping first destroyed the relaxation behavior of PLZST. Then with the increase in BiNbO4, the local defect dipole forms another weak coupling and reduce the antiferroelectric-ferroelectric phase transition field (EAFE-FE). When x = 0.05, the maximum energy density is 0.82 J/cm(3), and the energy efficiency is 88%.