Electrostatics and channel coupling on 28 nm FD-SOIfor cryogenic applications

28 nm FD-SOI technology is electrically characterized aiming at cryogenic applications. Electrostatics and transport are evaluated and compared while lowering temperature from 300 K down to 4.2 K. FD-SOI versatility is shown over a wide temperature range of operation, as the back gate tuning efficiency is preserved at low temperatures. Insights on back gate bias behavior at room and low temperatures are obtained and the electrostatic coupling between front and back channels can be successfully modelled by using 1D Poisson-Schrödinger calculation from 300 K down to 4.2 K.