Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology

IEEE Transactions on Microwave Theory and Techniques(2021)

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摘要
This article presents practical design considerations and methodologies for a 28-GHz front-end module (FEM) in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS technology for the fifth generation (5G) wireless communication. The design adopts a gain-boosting technique that is comprehensively analyzed with a transformer-based stacked-FET power amplifier (PA). Then, the co-design of the trans...
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关键词
Finite element analysis,Field effect transistors,Transistors,Capacitance,Switches,Topology,Logic gates
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