In-Plane Characterization Of Pzt Thin Films For The Creation Of A General Impedance Model

The in-plane dielectric and ferroelectric properties of preferentially oriented lead zirconate titanate (PZT) thin films are characterized using interdigitated transducers (IDTs). By combining finite element method simulations and capacitance measurements, values of the dielectric constant of films with thicknesses between 150nm and 800nm are obtained. A modified Sawyer-Tower circuit is used to investigate the polarization loops measured in-plane using IDT electrodes. A well-defined hysteresis loop is obtained demonstrating the switching of the polarization of the ferroelectric domains. Leakage current measurements reveal high resistivity and are an indication of the high quality of the PZT film. The obtained characteristics are used to determine the total impedance of the IDT-PZT structure. Here, the structure is represented by an equivalent ladder circuit using the inductance and resistance of the IDT electrodes and the capacitance and conductance of the PZT film. The obtained total impedance matches low frequency measurements.