Atomic Layer Deposited Nanolaminates Of Zirconium Oxide And Manganese Oxide From Manganese(Iii)Acetylacetonate And Ozone

Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnO (x) layers. Magnetic and electric properties were studied of films deposited at 300 degrees C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO2, while the manganese oxide was shown to consist of cubic Mn2O3 and tetragonal Mn3O4 phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.