Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory

In this brief, we propose a Two-bits-cell based NAND-Like MRAM device. The structure is composed of several stacking cells sharing the same heavy metal and each cell is composed of two magnetic tunnel junctions (MTJs). Every two stacking MTJs share the same transistor and the demand of three-terminal bit cell for two access transistors is eliminated due to the contribution of NAND-Like structure, ...