A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

Nicola Modolo,Andrea Minetto,Carlo De Santi,Luca Sayadi,Sebastien Sicre,Gerhard Prechtl,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

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摘要

In this work, a detailed analysis of the turn-on behavior of E-mode p-GaN HEMT is reported, with a focus on the impact of hard switching conditions. The study is carried out by means of a novel custom system, developed with the purpose of investigating - on wafer level- the impact of hard switching stress in terms of dynamic on-resistance (RDSON), turn-on switching locus, and power dissipation. Th...

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关键词

Performance evaluation,Switches,Life estimation,HEMTs,Reliability engineering,Power dissipation,Gallium nitride

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