Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation

2021 IEEE International Reliability Physics Symposium (IRPS)(2021)

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摘要
Phase change memory (PCM) is rapidly emerging as a promising candidate for building non-von Neumann accelerators for deep neural networks (DNN) based on in-memory computing. However, conductance drift and noise are key challenges for the reliable storage of synaptic weights in such accelerators. We demonstrate, for the first time, conductance drift and noise mitigation by integrating a projection ...
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关键词
Phase change materials,Resistance,Phased arrays,Neural networks,Switches,Programming,Phase change memory
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