A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Nicola Modolo,Carlo De Santi,Andrea Minetto,Luca Sayadi,Sebastien Sicre,Gerhard Prechtl,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini

IEEE Electron Device Letters（2021）

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摘要

Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transistors submitted to semi- ON-state stress. The model is validated through comparison with the experimental data, obtained by means of a pulsed-drain cur...

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关键词

Stress,MODFETs,HEMTs,Mathematical model,Transient analysis,Wide band gap semiconductors,Electron traps

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