Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs

DC performances of depletion-mode 100 nm In0.53Ga0.47As/InP high electron mobility transistor (HEMT) heterogeneously integrated to silicon substrate by SiO2–SiO2 bonding were investigated by using numerical simulation. Effects of fixed charges at the InP/SiO2 interface, the SiO2/SiO2 bonding interface, and the SiO2/Si interface on HEMT are compared. Among these charges, dc characteristics of HEMT ...