Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs

In this work, we present the substrate bias enhanced trap effects on time-dependent dielectric breakdown (TDDB) in GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) by experiment. Under different substrate biases, the shape parameter $\beta $ and scale factor $\eta $ of the Weibull distribution are extracted from the experimental data. A monotonical decrease in ...