Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration
IEEE TRANSACTIONS ON ELECTRON DEVICES（2021）
Key words
III-V on Si,high-frequency,InGaAs high-electron-mobility transistors (HEMTs),InGaAs-oninsulator (InGaAs-OI),InGaAs on Si,monolithic 3-D (M3D),wafer bonding
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