Ballast Resistor Temperature Effect and Ruggedness
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)(2019)
摘要
The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat dissipated into the substrate. Conversely the same device structure sitting on top of thin oxide has less self-heating and improved heat dissipation to the substrate. Furthermore, the orientation of the device contacts relative to current flow also impacted device nominal resistance and ruggedness.
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关键词
Ballast resistor,silicide,self-heating,ballasting,silicided polysilicon
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