Two-Dimensional Electron Gas At Wurtzite-Zinc-Blende Inp Interfaces Induced By Modulation Doping

The quality, such as long-range correlation and mobility, of a two-dimensional electron gas (2DEG) is limited by, among other factors, interface roughness, which is inherent to the use of compositional heterostructures. Polytypic heterostructures have atomically sharp interfaces and minimal strain, decreasing the interface roughness, which may increase the mobility and long-range correlation of 2DEGs. In this work, we show the formation of a 2DEG at the wurtzite-zinc blende interface in partially n-type-doped InP nanowires using power-dependent photoluminescence. We additionally determined the wurtzite-zinc blende InP valence band offset to be 35meV< E v < 70meV. Our results may enable the study of electron gases at interfaces, which are atomically flat over large areas.