Investigation of Mg contact on SI-GaAs
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM)(2020)
摘要
We present an anomal current decrease for Mg contact on semi-insulating (SI) GaAs. The explanation of the observed effect is discussed within the light of the observed transport characteristics and XPS analysis.
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关键词
Metallization,Thermionic emission,Gallium arsenide,Sensor phenomena and characterization,Semiconductor diodes,Tuning,Standards
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