High Mobility n -type Field-Effect Transistors Based on WSe 2 /PdSe 2 HeterostructuresArthur Bowman,Kraig Andrews,Amanda Haglund,David Mandrus,Zhixian ZhouBulletin of the American Physical Society(2021)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要