Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.