Cmos Charge Qubits And Qudits: Entanglement Entropy And Mutual Information As An Optimization Method To Construct Cnot And Swap Gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY(2021)

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摘要
In this paper, we propose an optimization method for the construction of two-qubit and two-qudit quantum gates based on semiconductor position-based charge qubits. To describe the evolution of various quantum states, we use a Hubbard based model and Lindblad formalism. The suggested optimization algorithm uses the time evolution of entanglement entropy and mutual information for the determination of the system parameters to achieve high fidelity gates.
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关键词
charge qubits, CMOS technology, entanglement entropy, tight binding formalism, qudits, quantum gates
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