An Active Bandpass Filter for LTE/WLAN Applications Using Robust Active Inductors in Gallium Nitride

This brief demonstrates the performance of the first active bandpass filter to implement an active inductor in gallium nitride (GaN) technology. Fabrication of the filter and inductor was done using a 0.5 $\mu \text{m}$ pHEMT GaN process with the system implemented on one 2 mm by 2 mm die. The tuning range of the active filter was measured to be 749 MHz at a centre frequency of 3.39 GHz with sep...