A 24gb/S/Pin 8gb Gddr6 With A Half-Rate Daisy-Chain-Based Clocking Architecture And Io Circuitry For Low-Noise Operation

The demand for high-performance graphics systems used for artificial intelligence continues to grow; this trend requires graphics systems to achieve ever higher bandwidths. Enabling GDDR6 DRAM to achieve data rates beyond 18Gb/s/pin [1] requires identifying and solving factors that affect the speed of a memory interface. Prior studies have showed that the memory interface is vulnerable from the signal integrity (SI) and power integrity (PI) perspective, since it is based on a parallel interface using single-ended signaling. Furthermore, circuit schemes to mitigate process, voltage, and temperature (PVT) variations in sub-nanometer DRAM process are required to improve performance. To achieve 24Gb/s/pin on a 1.35V DRAM process, this work proposes a GDDR6 DRAM with a half-rate clocking architecture and optimized I/O.