Impact of On-Current on the Static and Dynamic Performance of TFET Inverters

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)(2019)

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摘要
Concerning the innovations in architecture of tunnel-field effect transistor (TFET), the potential to achieve higher on-current increases. In respect thereof, the focus of this paper is on an optimized TFET with higher current flowing through its channel and simulating its static and dynamic behavior using a compact model. The scalability of the model allows to estimate the impact of an on-current improvement on the intrinsic speed and switching energy of TFET inverters through scaling their channel length and supply voltage.
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关键词
on-current improvement,compact model,dynamic behavior,static behavior,optimized TFET,on-current increases,tunnel-field effect transistor,TFET inverters
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