Magnetic And Electrical Transport Properties Of Ru Doped Cobalt Ferrite Thin Films With Perpendicular Magnetic Anisotropy

Epitaxial ferrimagnetic thin films of (Co, Ru) Fe2O4 were grown on MgO (001) substrate using pulsed laser deposition technique. Ruthenium substitution in cobalt ferrite has increased the conductivity by orders of magnitude, but it has a minimal effect on magnetic properties. The film has a high coercivity and perpendicular magnetic anisotropy (PMA), where the magnetic easy axis points perpendicular to the film surface. We report the magnetic and electrical transport properties here. The temperature variation of resistivity showed different conduction mechanisms at high and low-temperature regimes. Room temperature Hall measurement reveals "n" type carrier with a carrier concentration of 4x10(20)/cm(3). The film showed negative MR and a linear decrement with the magnetic field without any saturation.