Carbon Nanotube Film/Silicon Heterojunction Photodetector For New Cutting-Edge Technological Devices

Featured ApplicationPhotodetectors based on carbon nanotube/n-silicon heterojunction can be applied in all the technology fields where a spectral range from near ultraviolet to near infrared and a response time of a few nanoseconds are necessary.Photodetector (PD) devices based on carbon nanotube/n-silicon heterojunction (NSH) have been realized, with a linear response in a large optical power range, proving competitive performances with respect to a recent nanostructure-based detector and those currently available on the market. The core of these devices is a thin semi-transparent and conductive single-walled carbon nanotubes film with a multitask role: junction element, light absorber and transmitter, photocarrier transporting layer, and charge collector. The PD exhibits rise times of some nanoseconds, detecting light from ultraviolet (240 nm) to infrared (1600 nm), and external quantum efficiency reaching 300% in the VIS spectra region.