On the electronic properties and performance of new nano thick solar material based on GeSe/SnS hetro-bilayer

Motivated by recent works dealing with electronic properties and high carrier mobility of monolayer materials and their potential applications in nano thick solar cells, we investigate the electronic properties and performance of new nano thick solar material based on GeSe/SnS hetro-bilayer. The calculations are performed using DFT calculations within GGA + vdW and HSE06 hybrid functional approximations. Our results indicate that this hetro-bilayer has a direct band gap of 1.48 eV , which is in the optimal range of the efficient single-junction solar cell, and forms the type-II band alignment in which SnS is the donor and GeSe is the acceptor. The values of V_oc , FF and J_sc using an external quantum efficiency with a limit of 100