Composition Control Of High Ga Cu(In,Ga)(S,Se)(2) Using Rtp Reaction

CIGS absorbers are developed using Se-capped precursor films with increased Ga composition. Films are reacted using a rapid thermal process, which uses reaction times on the order of minutes. It is observed that Ga profiles can be controlled by adjusting the Se availability in the reaction. Additionally, it is shown that CIGS grain size increases with Ga content; however, morphology variability may be increased. Two different processes for introducing S to the reaction are investigated.