Phase transformation and dielectric properties of Y doped HfO2 thin films

Journal of Alloys and Compounds(2021)

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摘要
•Y doped HfO2 films are grown using a solution processing method.•The microstructure and dielectric performance are systematically characterised.•The phase transformation and relative dielectric constant are affected by grain size or film thickness.•A phase diagram is built to explain the variations in the crystal structure and dielectric properties.
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关键词
Y doped HfO2,Thin films,Phase transformation,Dielectric properties
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